Two-step interconnect testing of semiconductor dies

ABSTRACT

The present invention relates generally to testing of interconnects in a semiconductor die, and more particularly to testing of semiconductor chips that are three-dimensionally stacked via an interposer. In one aspect, a method for testing an interconnect in a semiconductor die comprises providing the semiconductor die, which includes a plurality of electrical contact elements formed at one or more surfaces of the semiconductor die, at least one interconnect-under-test disposed between a first electrical contact element and a second electrical contact element, and an electrical component electrically coupled between the interconnect-under-test and at least one third electrical contact element.

INCORPORATION BY REFERENCE TO RELATED APPLICATIONS

Any and all priority claims identified in the Application Data Sheet, orany correction thereto, are hereby incorporated by reference under 37CFR 1.57. This application claims foreign priority to European patentapplication EP 13162824.0 filed on Apr. 8, 2013. The aforementionedapplication is incorporated by reference herein in its entirety, and ishereby expressly made a part of this specification.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates generally to testing of interconnects in asemiconductor die, and more particularly to testing of semiconductorchips that are three-dimensionally stacked via an interposer.

Description of the Related Technology

The semiconductor industry is on an ongoing quest to integrate morefunctionality into a smaller form factor while increasing performance,lowering power consumption and/or reducing cost. Traditionally,two-dimensional and lateral scaling approaches have been predominantlyused, including, for example, conventional CMOS scaling, includingmultiple IP cores in a single die (system-on-chip (SoC)), includingmultiple dies in a single package (multi-chip package (MCP)) andincluding multiple ICs on a printed circuit board (PCB). More recently,three dimensional scaling including scaling in the third, verticaldimension started to become exploited, including, for example,system-in-package (SiP), in which multiple naked dies are verticallystacked in a single IC package, and interconnected by means ofwire-bonds to the substrate, and package-on-package (PoP), in whichmultiple packaged chips are vertically stacked.

In particular, three-dimensional (3D) stacking of chips is gainingincreased interest, as it promises higher transistor densities andsmaller footprints of electronic products. The latest evolution in thislist of innovations is the so-called three-dimensional stacked IC(3D-SIC), which includes a single package containing a vertical stack ofnaked dies which are interconnected by means of inter-dieinterconnections, and can further include through-substrate-vias (TSVs).3D stacking based on inter-die interconnections offers the benefits ofmore functionality, higher bandwidth and performance at smaller sizes,alongside lower power consumption and cost; and this even in an era inwhich conventional feature-size scaling becomes increasingly difficultand expensive.

Currently, a lot of research and development work is done aroundthree-dimensional stacking of integrated circuits. Two popular set-upsare illustrated in FIG. 1(a) and FIG. 1(b). FIG. 1(a) illustrates aninterposer-based 3D die stack in which multiple active dies 10, 11, 12are placed side-by-side on top of and interconnected through aninterposer 13, such as a semiconductor, e.g. silicon, interposer. Theactive dies 10, 11, 12 are typically connected to the interposer 13 bymeans of high-density micro-bumps 14, e.g. Cu and CuSn micro-bumps. In atypical set-up (as depicted in FIG. 1(a)), the interposer contains TSVs15 that connect to external package pins. Such 3D stacks are attractivefor high-performance compute and communication applications, as theyoffer high-bandwidth interconnect between various active dies 10, 11, 12and good cooling opportunities. Also, such 3D stacks allow to break up asingle large die into multiple dies 10, 11, 12 and hence increase theyield, and enable the combination of heterogeneous dies in a singleproduct. It can be predicted that interposer-based 3D stacking withmultiple active dies 10, 11, 12 placed side-by-side on top of andinterconnected through an interposer 13 will evolve to 3D stacking,where multiple 3D towers 16, 17 of active dies are placed side-by-sideof top of and interconnected through an interposer, for example asemiconductor interposer such as a silicon interposer, as for exampleillustrated in FIG. 1(b). Such 3D stacks are attractive also forhand-held and portable consumer electronics, due to their smallfootprint.

In order to reduce the overall system cost, there is a need to reducethe cost of fabricating the interposer 13. Typically, a low-cost processtechnology is used to fabricate such interposer 13 which can use:relatively larger feature sizes, predominantly passive components (i.e.,minimum active components), mature process technologies, andhigh-yielding manufacturing processes.

Despite the high yield, it typically pays off to perform pre-bondtesting of the interposer 13 before stacking. This is mainly driven bythe cost ratio between the (cheap) interposer die 13 and the (moreexpensive) active dies 10, 11, 12 or die towers 16, 17 placed on top ofit. If a faulty interposer 13 is detected only after stacking activedies 10, 11, 12 or die towers 16, 17 on top of it, the entire stackneeds to be discarded, and in this way, “a 10¢ interposer can ‘kill’ two50$ dies”. Hence, there is a need for pre-bond (“Known-Good Die”, KGD)testing of interposers 13 for manufacturing defects.

Testing an interposer which predominantly comprises passive componentsmay not be conceptually very difficult. Nevertheless, testing theinterposer can be practically difficult at least in part because ofdifficulty of accessing internal components of the interposer, e.g.,interconnects, to be tested. For example, conventionally, testing aninterconnect is typically performed by accessing both ends of theinterconnect. To test horizontal interconnects in an interposer, theinterconnects can be accessed from the top. However, the microbumps 14at the top can be fine-pitched, for example, making it difficult toaccess the interconnects via a probe card. In addition, a suitable probecard may be expensive and/or introduce inaccuracies in touch-down. Theremight also be many interconnect ends to be probed, spread out over alarge area. Moreover, ideally, probes would be placed at top and bottomof the interposer, to test signal paths from top to bottom of theinterposer and vice versa. However, it is difficult to get such dualside access, as typically a wafer will be present on a chuck, thusreducing the access possibilities to single side access. Dual sideprobing on a thinned wafer poses yet more problems, in view ofdeformation of the thinned wafer which will occur (sagging, warping,etc.). Thus, there is a need for testing methods that can overcome thechallenges associated with accessing internal components, e.g.,interconnects, of a semiconductor die, such as an interposer,

SUMMARY OF CERTAIN INVENTIVE ASPECTS

It is an object of embodiments disclosed herein to provide a method fortesting semiconductor dies, e.g. interposers, for manufacturing defects,and a semiconductor die, e.g. an interposer, which is testable formanufacturing defects.

The above objective is accomplished by a method and a device accordingto embodiments herein.

In a first aspect, the some embodiments provide a method for testing aninterconnect in a semiconductor die such as for instance an interposer,the semiconductor die having at its surface a plurality of electricalcontact elements, and comprising at least an interconnect-under-testbetween a first electrical contact element and a second electricalcontact element, there being an electrical component electricallycoupled between the interconnect-under-test and at least one thirdelectrical contact element, optionally between theinterconnect-under-test and at least two third electrical contactelements. The method comprises testing a first signal path in thesemiconductor die for manufacturing defects, the first signal pathcomprising a first part of the interconnect-under-test and a firstdeviation path from the interconnect-under-test over the electricalcomponent to a third electrical contact element, thus obtaining firsttest results; and testing a second signal path in the semiconductor diefor manufacturing defects, the second signal path comprising a secondpart of the interconnect-under-test and a second deviation path from theinterconnect-under-test over the electrical component to a thirdelectrical contact element, thus obtaining second test results. Thefirst and the second part of the interconnect-under-test together formthe interconnect-under-test. The third electrical contact element usedfor the first deviation path and the third electrical contact elementused for the second deviation path may either be one and the samecontact element, or may be two different electrical contact elements. Inthe latter case, the third electrical contact elements may be called thethird and the fourth electrical contact element.

A method according to some embodiments may furthermore comprisedeciding, from the first and second test results, whether or not theinterconnect-under-test suffers from manufacturing defects.

In particular embodiments, the interconnect-under-test may be a verticalinterconnection between a first electrical contact element at a firstmajor surface of the semiconductor die, e.g. interposer, and a secondelectrical contact element at a second major surface of thesemiconductor die, e.g. interposer, opposite to the first major surface.In such case, testing a first signal path may comprise testing a pathbetween the first electrical contact element and a third electricalcontact element at the same major surface of the semiconductor die asthe first electrical contact element. Testing a second signal path maycomprise testing a path between the second electrical contact elementand a third electrical contact element. This latter third electricalcontact element may be the same as the third electrical contact elementat the same major surface of the semiconductor die as the firstelectrical contact element. However, more advantageously is to use forthe second third electrical contact element one of the at least onethird contact elements which is provided at the same major surface ofthe semiconductor die as the second electrical contact element. Thisallows to perform a first measurement from one side of the semiconductordie, and a second measurement from the opposite side of thesemiconductor die, both measurements together providing informationabout manufacturing defects for the complete interconnect.

In alternative embodiments, the interconnect-under-test may be ahorizontal interconnection between a first and a second electricalcontact element at a first major surface of the semiconductor die, e.g.interposer. Testing a first signal path may comprise testing a pathbetween the first electrical contact element and a third electricalcontact element at the same major surface of the semiconductor die.Testing a second signal path may then comprise testing a path betweenthe second electrical contact element and the same third electricalcontact element or another third electrical contact element at the samemajor surface of the semiconductor die.

In a method according to some embodiments, testing the first signal pathmay include measuring a characteristic of the electrical component.

In a second aspect, some embodiments provide a semiconductor die, e.g.an interposer, suitable for being tested for manufacturing defects. Thesemiconductor die comprises a surface with a plurality of electricalcontact elements, at least an interconnect-under-test between a firstelectrical contact element and a second electrical contact element, andan electrical component electrically coupled between theinterconnect-under-test and at least one third electrical contactelement, optionally between the interconnect-under-test and at least twothird electrical contact elements.

In a semiconductor die according to some embodiments, the electricalcomponent may be suitable for allowing formation of a first signal pathover a first part of the interconnect-under-test and a deviation pathfrom the interconnect-under-test over the electrical component to athird electrical contact element, and allowing formation of a secondsignal path over a second part of the interconnect-under-test and adeviation path from the interconnect-under-test over the electricalcomponent to one of the third electrical contact elements. The thirdelectrical contact element used with the first deviation path and thethird electrical contact element used with the second deviation path maybe one and the same contact element, or may be different contactelements.

In some embodiments, the interconnect-under-test may be a verticalinterconnection between a first electrical contact element at a firstmajor surface of the semiconductor die and a second electrical contactelement at a second major surface of the semiconductor die opposite tothe first major surface. The third electrical contact elements to whichthe first and second deviation paths connect may be different contactelements. Preferably, such third contact elements are located atopposite major surfaces of the semiconductor die, such that for eachmeasurement a third contact element may be used which is located at thesame major surface of the semiconductor die as the first, resp. thesecond electrical contact element. This allows partial measurements froma single side of the semiconductor die, without requirement forsimultaneous access to both sides of the semiconductor die.

In an alternative semiconductor die according to some other embodiments,the interconnect-under-test may be a horizontal interconnection betweena first electrical contact element at a first major surface of thesemiconductor die and a second electrical contact element at the firstmajor surface of the semiconductor die.

In particular embodiments, the third electrical contact elements towhich the first and second deviation paths connect are one and the samecontact element. In alternative embodiments, the third electricalcontact elements to which the first and second deviation paths connectare different contact elements.

The electrical component may be a component of which an electricalcharacteristic can be measured. The electrical component may forinstance be a diode, such as a diode which may be reused for ESDprotection.

The semiconductor die may be any of a passive interposer, an active-liteinterposer or an active interposer.

Some embodiment disclosed herein address the challenges of mechanicaltest access for pre-bond testing of dies such as interposers, forexample semiconductor, such as silicon, dies. By inserting a “component”on a deviation path starting between a first and a second part of theinterconnect-under-test, the interconnect-under-test is allowed to betested in a two-step approach: first from one end of theinterconnect-under-test to the component, and then from the other end ofthe interconnect-under-test to the component. If both sub-tests pass, itcan be concluded that the total interconnect-under-test is intact. Someembodiments disclosed herein can eliminate a need for simultaneousphysical probe access at the two ends of the interconnect-under-test.Some embodiments may be applied for testing vertical interconnects, i.e.where the ends of the interconnect-under-test are located at oppositesurfaces of the semiconductor die, which is difficult in view of probingat two sides of the semiconductor die being required. Hence for testingvertical interconnects in accordance with some embodiments disclosedherein, probing can be done first on the top-side of the semiconductordie, and later on the bottom-side thereof, thereby avoiding thedual-side probing on a thinned semiconductor die. Some embodiments mayalso be applied, alternatively or on top thereof, for testing horizontalinterconnects, i.e. where the ends of the interconnect-under-test arelocated at a same surface of the semiconductor die, which may beparticularly challenging if these ends land on fine-pitched microbumps.For testing horizontal interconnects, probing can be done only on thetop-side of the semiconductor die, but, in accordance with someembodiments, if this involves too many I/Os in too large arrays, thatcan be broken up in multiple touch-downs.

In a particular embodiment, the “electrical component” is a diode.Particular types of semiconductor dies to be tested for manufacturingdefects of their interconnects are interposers. Interposers withembedded diodes are sometimes referred to as “light-active” or“active-light” interposers, as a diode is an active component which canbe added to a passive interposer with the smallest (and thereforecheapest) amount of additional processing steps. The diodes in“light-active” interposers can also be (re-)used to integrate ESDprotection functionality, thereby saving cost on the active dies andeven on the system package. Such ESD protection diodes would be placedon all external I/Os, and in a particular embodiment, these diodes canbe reused to implement the two-step testing that alleviated physicaltest access requirements.

Particular and preferred aspects of the invention are set out in theaccompanying independent and dependent claims. Features from thedependent claims may be combined with features of the independent claimsand with features of other dependent claims as appropriate and notmerely as explicitly set out in the claims.

For purposes of summarizing the invention and the advantages achievedover the prior art, certain objects and advantages of the invention havebeen described herein above. Of course, it is to be understood that notnecessarily all such objects or advantages may be achieved in accordancewith any particular embodiment of the invention. Thus, for example,those skilled in the art will recognize that the invention may beembodied or carried out in a manner that achieves or optimizes oneadvantage or group of advantages as taught herein without necessarilyachieving other objects or advantages as may be taught or suggestedherein.

The above and other aspects of the invention will be apparent from andelucidated with reference to the embodiment(s) described hereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will now be described further, by way of example, withreference to the accompanying drawings, in which:

FIG. 1(a) illustrates an interposer-based 3D die stack in which multipleactive dies placed side-by-side on top of and interconnected through aninterposer, while FIG. 1(b) illustrates 3D stacking, where multiple 3Dtowers of active dies are placed side-by-side of top of andinterconnected through an interposer, both as known in the art.

FIG. 2 illustrates an interposer model comprising vertical andhorizontal connections, according to some embodiments.

FIG. 3(a) schematically illustrates a method according to a firstembodiment for testing a horizontal interconnect.

FIG. 3(b) schematically illustrates a method according to a secondembodiment for testing a vertical interconnect.

FIG. 4 schematically illustrates a semiconductor die, e.g. aninterposer, with a vertical interconnect and design-for-test circuitryaccording to some embodiments. Such substrate may be used with methodsaccording to some embodiments.

FIG. 5(a) schematically illustrates a semiconductor die, e.g. aninterposer, with a horizontal interconnect and, FIG. 5(b) schematicallyillustrates a similar semiconductor die with design-for-test circuitryaccording to some embodiments. Such substrate may be used with methodsaccording to some embodiments.

FIG. 6 and FIG. 7 schematically illustrate a method according to a thirdembodiment for testing a plurality of vertical interconnects.

FIG. 8 and FIG. 9 illustrate the dual use of diodes as electricalelements for testing, and for ESD protection of the circuits duringnormal use of the IC stack, according to some embodiments.

FIG. 10 illustrates shared use of test wires in accordance with someembodiments.

The drawings are only schematic and are non-limiting. In the drawings,the size of some of the elements may be exaggerated and not drawn onscale for illustrative purposes. The dimensions and the relativedimensions do not necessarily correspond to actual reductions topractice of the invention.

Any reference signs in the claims shall not be construed as limiting thescope.

In the different drawings, the same reference signs refer to the same oranalogous elements.

DETAILED DESCRIPTION OF CERTAIN ILLUSTRATIVE EMBODIMENTS

The present invention will be described with respect to particularembodiments and with reference to certain drawings but the invention isnot limited thereto but only by the claims.

The terms first, second and the like in the description and in theclaims, are used for distinguishing between similar elements and notnecessarily for describing a sequence, either temporally, spatially, inranking or in any other manner. It is to be understood that the terms soused are interchangeable under appropriate circumstances and that theembodiments of the invention described herein are capable of operationin other sequences than described or illustrated herein.

Moreover, the terms top, under and the like in the description and theclaims are used for descriptive purposes and not necessarily fordescribing relative positions. It is to be understood that the terms soused are interchangeable under appropriate circumstances and that theembodiments of the invention described herein are capable of operationin other orientations than described or illustrated herein.

It is to be noticed that the term “comprising”, used in the claims,should not be interpreted as being restricted to the means listedthereafter; it does not exclude other elements or steps. It is thus tobe interpreted as specifying the presence of the stated features,integers, steps or components as referred to, but does not preclude thepresence or addition of one or more other features, integers, steps orcomponents, or groups thereof. Thus, the scope of the expression “adevice comprising means A and B” should not be limited to devicesconsisting only of components A and B. It means that with respect to thepresent invention, the only relevant components of the device are A andB.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment of the present invention. Thus, appearances of the phrases“in one embodiment” or “in an embodiment” in various places throughoutthis specification are not necessarily all referring to the sameembodiment, but may. Furthermore, the particular features, structures orcharacteristics may be combined in any suitable manner, as would beapparent to one of ordinary skill in the art from this disclosure, inone or more embodiments.

Similarly it should be appreciated that in the description of exemplaryembodiments of the invention, various features of the invention aresometimes grouped together in a single embodiment, figure, ordescription thereof for the purpose of streamlining the disclosure andaiding in the understanding of one or more of the various inventiveaspects. This method of disclosure, however, is not to be interpreted asreflecting an intention that the claimed invention requires morefeatures than are expressly recited in each claim. Rather, as thefollowing claims reflect, inventive aspects lie in less than allfeatures of a single foregoing disclosed embodiment. Thus, the claimsfollowing the detailed description are hereby expressly incorporatedinto this detailed description, with each claim standing on its own as aseparate embodiment of this invention.

Furthermore, while some embodiments described herein include some butnot other features included in other embodiments, combinations offeatures of different embodiments are meant to be within the scope ofthe invention, and form different embodiments, as would be understood bythose in the art. For example, in the following claims, any of theclaimed embodiments can be used in any combination.

It should be noted that the use of particular terminology whendescribing certain features or aspects of the invention should not betaken to imply that the terminology is being re-defined herein to berestricted to include any specific characteristics of the features oraspects of the invention with which that terminology is associated.

In the description provided herein, numerous specific details are setforth. However, it is understood that embodiments of the invention maybe practiced without these specific details. In other instances,well-known methods, structures and techniques have not been shown indetail in order not to obscure an understanding of this description.

In the context of the embodiments, an interposer refers to an electricalinterface for routing signals between two or more dies. The two or moredies may be, for example. placed side-by-side on the interposer. Alsostacks of dies may be placed side-by-side on the interposer. In oneaspect, an interposer may be viewed as a bridge between two electroniccomponents, e.g., a die and a board, which functions to electricallyconnect the two electronic components that have electrical connectionshaving different pitches. For example, an interposer may bridge thecomponents by spreading a connection to a wider pitch, or by rerouting aconnection to a different connection. The packaging industry sometimescategorizes an interposer as being “active,” “passive,” or“active-lite.” A passive interposer can refer to an interposer that canmake electrical connections predominantly using passive wires, whilehaving a minimum number of, e.g., zero, active device elements (e.g.,diodes, transistors, etc.). An “active-lite” interposer can refer tosomething in between a true passive interposer and an active die. It cancontain, for example, wires and a limited number of electronic elements.An “active-lite” interposer can advantageously have the low-cost benefitof a passive interposer and to invest only little to get some extrabenefits without going to the price of a full active die.

In the following, features of the embodiments are explained by makingreference to an interposer. However, the invention is not limitedthereto, and can be applied more generally on any type of semiconductorwafers. Nevertheless, embodiments herein prove to be particularlyadvantageous in case the semiconductor die is a so-called active-liteinterposer (passive interposer with low-cost diode implementation). Atpresent, there is a need for testing vertical interconnects inthinned-down wafers.

An interposer, for example a semiconductor interposer such as e.g. asilicon interposer, can be represented using a schematic model shown inFIG. 2. The interposer 20 illustrated in FIG. 2 comprises a first portPort 0 for external I/Os at its bottom side, and further comprises portsPort 1, Port 2, Port 3 for each of the active dies Die 1, Die 2, Die 3to be placed on top of it at its top side. The bottom I/Os at the firstport Port 0 include conductive components, e.g. Cu, pillars or C4 bumps,which electrically connect to the package substrate. The top ports Port1, Port 2, Port 3, may for example include fine-pitch micro-bumps. Theinterposer 20 provides wire connections between these ports including,e.g., “vertical” connections through TSVs between Port 0 and one or moreof Ports X (where X is in {1, 2, 3, . . . }) and the “horizontal”connections between one or more of Ports X and one or more of Ports Y(where X,Y are in {1, 2, 3, . . . }).

Testing an interposer, for example a semiconductor interposer such as asilicon interposer, refers to testing at least the wire connections thatmake up the interposer 20. Mechanical test access for pre-bond testingof such an interposer can be challenging, for the following reasons:

-   -   Testing of wire connections can include accessing both ends of        the wire.    -   Testing of the horizontal connections can include probe access        to the micro-bumps at the top-side of the interposer 20. These        micro-bumps typically come in large numbers (hundreds to        thousands) in large arrays in very fine pitches (currently 40 um        and scaling down). Probe access on these micro-bumps may not be        trivial and subject of current research, as for example        described by Ken Smith et al., in “Evaluation of TSV and        Micro-Bump Probing for Wide I/O Testing”, Proceedings IEEE        International Test Conference (ITC), September 2011. Paper 17.2.    -   Testing of the vertical connections can include simultaneous        probe access to the micro-bumps at the top-side of the        interposer (challenging, see above) and to the larger bumps at        the bottom-side of the interposer. Dual-side probing can be        challenging, especially if it concerns a thinned (˜100 um thin)        interposer wafer.

Embodiments described herein provide an interposer 30 suitable for beingtested for manufacturing defects such as opens or shorts. Suchinterposer 30 is illustrated in FIG. 3(a) and FIG. 3(b), respectively,wherein the interposer 30 of FIG. 3(a) is provided with a horizontalinterconnect according to some embodiments, and the interposer 30 ofFIG. 3(b) is provided with a vertical interconnect according to someother embodiments. In reality, interposers 30 being tested may include acombination of horizontal and/or vertical interconnects. The interposer30 comprises a surface having a plurality of electrical contact elements31, 31 a, 31 b, 31 c. At least one interconnect-under-test 32, e.g. ahorizontal interconnect or a vertical interconnect, is provided in theinterposer 30, between a first electrical contact element 31 a and asecond electrical contact element 31 b. At least one electricalcomponent 33 is electrically coupled between the interconnect-under-test32 and at least one third electrical contact element 31 c.

A method of testing the interposer 30 according to some embodimentsincludes the following processes:

1) The at least one electrical component 33, e.g. one or more diodes,would be characterized on a pre-defined test structure to calibrate thesubsequent measurements.

2) One part or one side of the interposer 30 is probed, and part of theinterconnect-under-test is characterized from a probe needle on thefirst electrical contact element 31 a, over the part of theinterconnect-under-test 32, and over a first deviation path from theinterconnect-under-test, over the electrical component 33 and down to aprobe needle on the third electrical contact element 31 c.

3) After probing the first part or first side of the interposer 30, asecond part or second side of the interposer 30 is probed, for exampleafter displacement of the probes over the surface of the interposer 30(at the same time avoiding having to use multiple probe cardssimultaneously), or after die/wafer flip, when the backside is exposed.Another part of the connect-under-test 32 is then characterised from thesecond electrical contact element 31 b and over a second deviation pathfrom the interconnect-under-test over the same electrical component 33and down to the third electrical contact element 31 c.

By using the method described above, an interconnect-under-test 32 canbe tested for opens or shorts in two sub-tests: first from the first endof the wire to an electrical component 33 somewhere in between, thenfrom a second end of the wire to the same electrical component 33. Ifeach of the sub-tests pass, it can be concluded that the totalinterconnect wire does not electrically suffer from a manufacturingdefect. By implementing a method in accordance with embodimentsdisclosed herein, where measurements are done over an intermediateelectrical component 33, the need for simultaneous physical probe accessat the two ends of the interconnect wire is alleviated or taken awaycompletely.

The yield of the interposer interconnect can then be tested by verifyingthat the characteristics of the electronic component 33, e.g. the diodecharacteristics, are similar from both ends of the probing.

It will be appreciated that for testing the verticalinterconnect-under-test 32 in the embodiment illustrated in FIG. 3(b)would may involve simultaneous probing on two sides of the wafer or die,which may not be practical or very difficult to implement: first a firstmeasurement may be performed between the first electrical contactelement 31 a, over the electrical component 33 to the third electricalcontact element 31 c; and thereafter a second measurement may beperformed between the second electrical contact element 31 b, over theelectrical component 33, also to the third electrical contact element 31c.

In order to avoid dual side probing, a two-step method for testing aninterconnect such as a vertical interconnect in accordance with someembodiments is illustrated in more detail in FIG. 4, FIG. 5 and FIG. 6.

FIG. 4 illustrates a semiconductor die, Die 1, e.g., an interposer,comprising a vertical interconnect 32 (interconnect-under-test) betweena first electrical contact element, Pad A, and a second electricalcontact element, Pad B, according to some embodiments. The firstelectrical contact element Pad A and the second electrical contactelement Pad B are provided at opposite sides of the semiconductor die.The semiconductor die furthermore comprises design-for-test circuitry inaccordance with embodiments. The design-for-test circuitry comprises asecond vertical interconnect 40 between a third electrical contactelement Pad X and a fourth electrical contact element Pad Y. The thirdelectrical contact element Pad X is located at the same side of thesemiconductor die Die 1 as the first electrical contact element Pad A,and the fourth electrical contact element Pad Y is located at the sameside of the semiconductor die Die 1 as the second electrical contactelement Pad B. The second vertical interconnect 40 is connected to thefirst vertical interconnect 32 via a circuit C. The second verticalinterconnect may be a dedicated interconnect for testing purposes, ormay be an existing vertical interconnect part of the functional design.In various embodiments, the circuit C can be reused from functionaldesign, or can be provided as a dedicated circuit for testing purposes.

Desirable characteristics of the circuit C can include: (1) it isimplementable in the die's process technology; (2) it should provide aproof of intact existence of the to-be-tested wires leading up to it;and (3) the impact on functional operation of the die should be minimalor zero. The circuit C may, for instance, include a wire (e.g. in apassive or active-lite interposer or in an active die), a diode (in anactive-lite interposer or in an active die) and/or a simple electroniccircuit, e.g., an active buffer or an inverter (e.g., in an active die).

It will be appreciate that the desirable characteristic of the circuit Cbeing measured can depend, on the type of circuit. For example, in casesthe circuit C includes a simple wire, connectivity can be tested, e.g.by via a resistance measurement, between Pad A and Pad X, and betweenPad B and Pad Y, respectively, in order to determine that theinterconnect between Pad A and Pad B exists. In cases where the circuitC includes a diode, its I-V, curve can be measured. While an I-V curveof a diode may take longer to measured, it can offer more detailedinsight in the state of the interconnect between Pad A and Pad B.

The two-step method in accordance with embodiments as described above,comprises in a first step probing on the first electrical contact Pad Aand the third electrical contact Pad X, thus testing the electricalconnection between them. This test proves the intact existence of theupper part, e.g. upper half of the first interconnect (between Pad A andPad B), and the intact existence of the upper part, e.g. upper half ofthe second interconnect (between Pad X and Pad Y), over the circuit C.If one of these would be broken or otherwise damaged, this will be shownin the test results.

Thereafter, in a second step, probing takes place on the second andfourth electrical contact pads Pad B and Pad Y, thus testing theelectrical connection between them. This test proves the intactexistence of the lower part, e.g. lower half of the first interconnect(between Pad A and Pad B), and the intact existence of the lower part,e.g. lower half of the second interconnect (between Pad X and Pad Y),over the circuit C. If one of these would be broken or otherwisedamaged, this will be shown in the test results.

The upper part and the lower part of the interconnect form the completeinterconnect.

If both the first step and the second step complete successfully, it canbe determined that the entire first interconnect between Pad A and PadB, and the entire second interconnect between Pad X and Pad Y areintact. It can thus be seen that not only the first interconnect betweenPad A and Pad B, but also the second interconnect 40 between Pad X andPad Y are tested.

FIG. 5(a) illustrates a semiconductor die Die 2, e.g. an interposer,comprising a horizontal interconnect 50 (interconnect-under-test)between a first electrical contact element Pad A and a second electricalcontact element Pad B, according to some embodiments. Die 2 mayrepresent a configuration where first electrical contact element Pad Aand the second electrical contact element Pad B provided at the sameside of the semiconductor die Die 2 and are configured such that it maybe difficult or even impossible to probe first and second electricalelements Pad A and Pad B simultaneously. Such configuration may exist,for example, where there are so many probe pads on Die 2 that it wouldrequire a very large and expensive probe card to contact all of them ina single touch-down. In FIG. 5(b), the semiconductor die Die 2furthermore comprises design-for-test circuitry in accordance withembodiments. The design-for-test circuitry comprises a second horizontalinterconnect 51 between a third electrical contact element Pad X and afourth electrical contact element Pad Y. The third and fourth electricalcontact elements Pad X and Pad Y are provided at the same side as thefirst and second electrical contact elements Pad A and Pad B. The secondhorizontal interconnect 51 is connected to the first horizontalinterconnect 50 via a circuit C. The second horizontal interconnect 51may be a dedicated interconnect for testing purposes, or may be anexisting horizontal interconnect 50. What has been said with respect tothe circuit C when referring to FIG. 4 also holds for the embodiment ofFIG. 5(b), but is not repeated here.

The two-step method in accordance with some embodiments describedherein, as described above, comprises a first step which includesprobing on the first electrical contact Pad A and on the thirdelectrical contact Pad X, thus testing the electrical connection betweenthem. This test can determine, for example, the intact existence of theleft part, e.g. left half of the first interconnect (between Pad A andPad B), and the intact existence of the left part, e.g. left half of thesecond interconnect (between Pad X and Pad Y), over the circuit C. Ifone of these would be broken or otherwise damaged, this will be shown inthe test results.

Thereafter, the two-step method further comprises a second step, inwhich probing takes place on the second and fourth electrical contactpads Pad B and Pad Y, thus testing the electrical connection betweenthem. This test can determine, for example, the intact existence of theright part, e.g. right half of the first interconnect (between Pad A andPad B), and the intact existence of the right part, e.g. right half ofthe second interconnect (between Pad X and Pad Y), over the circuit C.If one of these would be broken or otherwise damaged, this will be shownin the test results.

The left part and the right part of an interconnect form the completehorizontal interconnect.

If both the first step and the second step complete successfully, it canbe concluded that the entire first interconnect between Pad A and Pad B,and the entire second interconnect between Pad X and Pad Y are intact.It can thus be seen that not only the first interconnect between Pad Aand Pad B, but also the second interconnect 40 between Pad X and Pad Yare tested.

FIG. 6 and FIG. 7 illustrate a method of manufacturing a deviceaccording to some embodiments, as well as a method of probing suchdevice, which can include an active-lite interposer.

Referring to FIG. 6, in a first step, an interposer 30, prior tothinning and stacking, is provided with a plurality of verticalinterconnects, which can still buried in the thick wafer. Probing isperformed on a first and a third electrical contact element 31 a, 31 cat the wafer front end. During probing, characteristics of theelectrical element 33, e.g. diode, can be measured to determine that avertical path from the first electrical contact element 31 a to theelectrical element 33 and from the third electrical contact element 31 cto the electrical element 33 exists.

In a second step, the TSVs of the interposer 30 can be exposed, by,e.g., thinning the interposer 30, and provided with second and fourthelectrical contact elements 31 b, 31 d. Referring to FIG. 7, in someembodiments, for ease of handling, the thinned interposer 30 may betemporarily mounted on a temporary carrier 50, e.g. a glass orsemiconductor wafer such as a silicon wafer, e.g. by a temporary gluelayer 51. During the second step of the testing method according toembodiments, characteristics of the electrical element 33, e.g. diode,can be measured to determine that a vertical path from the secondelectrical contact element 31 b to the electrical element 33 and fromthe fourth electrical contact element 31 d to the electrical element 33exists.

From the results of both the first and the second step of the method, itcan be determined whether the interconnect-under-test, in the exampleillustrated two vertical interconnects-under-test, are defective or not.

In principle, any device of known and stable characteristics can be usedas electrical component 33 for implementing a device and a methodaccording to embodiments. The use of diodes is a particularlyadvantageous embodiment, as embedding diodes on the interposer 30 at theIO connections is already a technique envisioned for future interposers,as illustrated in FIG. 6. Using them for testing would then be donewithout any extra hardware cost.

FIG. 8 illustrates an interposer 30 with mounted thereon a first IC 61and a second IC 62, according to some embodiments. One or both of thefirst IC 61 and the second IC 62 includes an electrostatic discharge(ESD) protection element 63 on a microbump IO ring. Furthermore, it isdesired to have ESD protection elements 64 on the interposer IO ring.These ESD protection elements 64 can be used for interconnect testing inaccordance with embodiments. Furthermore, transient voltage suppressor(TVS) elements 65 can be provided for system ESD protection. It is anadvantage of such embodiment that ESD protection elements 63 may takeminimum area on every stacked IC 61, 62, while at the same time, a loweramount of off-chip ESD components for system-level ESD protection arerequired.

FIG. 9 schematically illustrates a system after stacking, in accordancewith some embodiments. Die 2 can include, for example, a stacked activedie, with light ESD protection circuitry (100 Volt HBM). Die 1 caninclude, for example, an active-lite interposer, comprising system-levelESD protection circuitry, replacing TVS's (1 kVolt HBM).

In order to avoid the additional area cost of dedicated test wires, inaccordance with some embodiments, test wires can be shared. Inparticular embodiments, test wires can be reused functional wires. Forinstance, the functional V_(DD) or V_(SS) line may be reused as testwire, with as circuit C a properly configured diode. Alternatively, onewire can serve as test wire for multiple functional wires, asillustrated in FIG. 10. In this case, the functional VDD/VSS linebetween Pad X and Pad Y is reused as test wire for multiple signallines, in particular the signal line between Pad A and Pad B, and thesignal line between Pad C and Pad D, with as circuit C a properlyconfigured diode between the shared line and each of the signal lines.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and descriptionare to be considered illustrative or exemplary and not restrictive. Theforegoing description details certain embodiments of the invention. Itwill be appreciated, however, that no matter how detailed the foregoingappears in text, the invention may be practiced in many ways. Theinvention is not limited to the disclosed embodiments.

It should be noted that the use of particular terminology whendescribing certain features or aspects of the disclosure should not betaken to imply that the terminology is being re-defined herein to berestricted to including any specific characteristics of the features oraspects of the disclosure with which that terminology is associated.

What is claimed is:
 1. A method of testing an interconnect in asemiconductor die, comprising: providing the semiconductor die, whereinthe semiconductor die comprises: a first interconnect-under-testarranged between a first electrical contact element and a secondelectrical contact element, and a second interconnect-under-testarranged between a third electrical contact element and a fourthelectrical contact element, wherein the second interconnect-under-testis connected to the first interconnect-under test via an electricalcomponent; testing a first signal path in the semiconductor die formanufacturing defects, the first signal path comprising a first part ofthe first interconnect-under-test and a first deviation path from thefirst interconnect-under-test through the electrical component to thethird electrical contact element, thus obtaining first test results,wherein testing the first signal path comprises probing the firstelectrical contact element and the third electrical contact element;testing a second signal path in the semiconductor die for manufacturingdefects, the second signal path comprising a second part of the firstinterconnect-under-test and a second deviation path from the firstinterconnect-under-test through the electrical component to the fourthelectrical contact element, thus obtaining second test results, whereintesting the second signal path comprises probing the second electricalcontact element and the fourth electrical contact element; determiningwhether or not the first interconnect-under-test suffers frommanufacturing defects from the first and second test results; anddetermining whether or not the second interconnect-under-test suffersfrom manufacturing defects from the first and second test results,wherein the first electrical contact element and the third electricalcontact element are formed at a first major surface on the same side ofthe semiconductor die.
 2. The method of claim 1, wherein the firstinterconnect-under-test comprises a first vertical interconnectionbetween the first electrical contact element and the second electricalcontact element formed at a second major surface of the semiconductordie on an opposite side of the first major surface, and wherein thesecond interconnect-under-test comprises a second verticalinterconnection between the third electrical contact element and thefourth electrical contact element formed at the second major surface ofthe semiconductor die.
 3. The method of claim 2, wherein testing thesecond signal path further comprises testing a path between the secondelectrical contact element and the third electrical contact element. 4.The method of claim 1, wherein the first interconnect-under-testcomprises a first horizontal interconnection between the first andsecond electrical contact elements formed at the first major surface ofthe semiconductor die, and wherein the second interconnect-under-testcomprises a second horizontal interconnection between the third andfourth electrical contact elements formed at the first major surface ofthe semiconductor die.
 5. The method of claim 4, wherein testing thesecond signal path comprises testing a path between the second and thirdelectrical contact elements.
 6. The method of claim 1, wherein testingthe first signal path includes measuring a characteristic of theelectrical component.
 7. The method of claim 1, wherein thesemiconductor die is an active-lite interposer comprising passive andactive device components.
 8. The method of claim 7, wherein theactive-lite interposer is provided, prior to thinning and stacking, witha plurality of vertical interconnects that are buried in a wafer,wherein probing on the first electrical contact element and on the thirdelectrical contact element is performed at a wafer front end, wherein,during probing on the first electrical contact element and on the thirdelectrical contact element, an electrical characterization is performedon the electrical element to determine that a vertical path from thefirst electrical contact element to the electrical element and from thethird electrical contact element to the electrical element exists. 9.The method of claim 8, wherein, after probing on the first electricalcontact element and on the third electrical contact element,through-silicon vias (TSVs) of the active-lite interposer are exposed,by thinning the active-interposer, and provided with the second andfourth electrical contact elements, wherein, during probing on thesecond electrical contact element and on the fourth electrical contactelement, an electrical characterization is performed on the electricalelement to determine that a vertical path from the second electricalcontact element to the electrical element and from the fourth electricalcontact element to the electrical element exists.
 10. The method ofclaim 9, further comprising mounting the thinned interposer temporarilyon a temporary carrier.
 11. A semiconductor die adapted to be tested formanufacturing defects, the semiconductor die comprising: a surfacehaving a plurality of electrical contact elements; a firstinterconnect-under-test between a first electrical contact element and asecond electrical contact element; a second interconnect-under-testbetween a third electrical contact element and a fourth electricalcontact element, wherein the second interconnect-under-test is connectedto the first interconnect-under test via an electrical component; afirst signal path in the semiconductor die configured for testing formanufacturing defects by obtaining first test results, the first signalpath comprising a first part of the first interconnect-under-test and afirst deviation path from the first interconnect-under-test through theelectrical component to the third electrical contact element, whereinthe first signal path is configured to be tested by probing the firstelectrical contact element and the third electrical contact element;second signal path in the semiconductor die configured for testing formanufacturing defects by obtaining second test results, the secondsignal path comprising a second part of the firstinterconnect-under-test and a second deviation path from the firstinterconnect-under-test through the electrical component to the fourthelectrical contact element, wherein the second signal path is configuredto be tested by probing the second electrical contact element and thefourth electrical contact element; wherein at least three of the firstelectrical contact element, the second electrical contact element, thethird electrical contact element and the fourth electrical contactelement are formed at a first major surface on the same side of thesemiconductor die.
 12. The semiconductor die of claim 11, wherein thefirst interconnect-under-test comprises a first horizontalinterconnection between the first and second electrical contact elementsformed at the first major surface of the semiconductor die.
 13. Thesemiconductor die of claim 12, wherein the secondinterconnect-under-test comprises a second horizontal interconnectionbetween the third a electrical contact element and the fourth electricalelement each formed at the first major surface of the semiconductor die.14. The semiconductor die of claim 11, wherein the firstinterconnect-under-test comprises a vertical interconnection between thefirst electrical contact element at the first major surface of thesemiconductor die and a second electrical contact element at a secondmajor surface of the semiconductor die opposite to the first majorsurface.
 15. The semiconductor die of claim 14, wherein the thirdelectrical contact element to which the first and second deviation pathsconnect comprise different contact elements.
 16. The semiconductor dieof claim 14, wherein the third electrical contact elements to which thefirst and second deviation paths connect comprise a same contactelement.
 17. The semiconductor die of claim 11, wherein the electricalcomponent comprises a diode.
 18. The semiconductor die of claim 11,wherein the die comprises at least one of a passive interposer, anactive-lite interposer or an active interposer.